A CMOS embedded RF-MEMS tunable capacitor for multi-band/multi-mode smartphones

Y. Kurui*, H. Yamazaki, Y. Shimooka, T. Saito, E. Ogawa, T. Ogawa, T. Ikehashi, Y. Sugizaki, H. Shibata

*この研究の対応する著者

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

This paper reports on 1-chip RF-MEMS tunable capacitor that equips CMOS driver circuit in the underlying layer. A Wafer Level Chip Scale Package (WLCSP) optimized for RF-MEMS is employed to minimize the module size. The MEMS actuation voltage is generated by an Actuation Voltage Generator (AVG). The boost mechanism employed in the AVG enables instant high voltage generation and reduction of the dielectric charging. The measured noise at RF frequencies is less than -120dbm, thanks to a shield metal layer formed between MEMS and CMOS layers. To achieve high power handing and high creep immunity, we employ the previously reported techniques, the Quadruple Series Capacitor (QSC) [1] and the SiN springs [2]. The quality factor measured in the WLCSP is larger than 100 at 1GHz. The capacitance can be changed from 1.4pF to 5pF by a step of 0.45pF.

本文言語English
ホスト出版物のタイトル2012 IEEE 62nd Electronic Components and Technology Conference, ECTC 2012
ページ109-114
ページ数6
DOI
出版ステータスPublished - 2012 10月 4
外部発表はい
イベント2012 IEEE 62nd Electronic Components and Technology Conference, ECTC 2012 - San Diego, CA, United States
継続期間: 2012 5月 292012 6月 1

出版物シリーズ

名前Proceedings - Electronic Components and Technology Conference
ISSN(印刷版)0569-5503

Conference

Conference2012 IEEE 62nd Electronic Components and Technology Conference, ECTC 2012
国/地域United States
CitySan Diego, CA
Period12/5/2912/6/1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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