A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC

X. D. Chen*, S. Fung, C. D. Beling, M. Gong, T. Henkel, H. Tanoue, Naoto Kobayashi

*この研究の対応する著者

研究成果: Article査読

11 被引用数 (Scopus)

抄録

Beryllium implantation induced defects in 6H-SiC pn junctions have been investigated by deep level transient spectroscopy. Five defect centers labeled BE1, BE2, BE3, BE4, and BE5 have been detected in the temperature range 100-450 K. A comparative study has also been performed in low beryllium doped n-type 6H-SiC, which proved that the BE1, BE2, and BE3 centers are electron traps located at 0.34, 0.44, and 0.53 eV, respectively, below the conduction band edge. On the other hand, the BE4 and BE5 centers have been found to be hole traps which are situated at 0.64 and 0.73 eV, respectively, above the valence band edge. Possible defect configurations associated with these deep levels are discussed.

本文言語English
ページ(範囲)4558-4562
ページ数5
ジャーナルJournal of Applied Physics
88
8
出版ステータスPublished - 2000 10
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)
  • 物理学および天文学(その他)

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