A few-electron vertical In0.56Ga0.44As quantum dot with an insulating gate

T. Kita, D. Chiba, Y. Ohno, H. Ohno

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Using an Al2 O3 gate insulator by atomic layer deposition and air-bridge drain electrode, we fabricated a quantum dot with few electrons based on an In0.56 Ga0.44 As resonant tunneling diode structure. Artificial atomic properties manifested themselves in magnetotransport, enabling the determination of effective electron g factors. Results show that the insulating gate structure used here is effective for realizing quantum dots made of narrow-gap semiconductors for studying spin-related phenomena.

本文言語English
論文番号232101
ジャーナルApplied Physics Letters
91
23
DOI
出版ステータスPublished - 2007 12 14
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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