A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology node for embedded applications

Takeshi Hamamoto, Yoshihiro Minami, Tomoaki Shino, Atsushi Sakamoto, Tomoki Higashi, Naoki Kusunoki, Katsuyuki Fujita, Kosuke Hatsuda, Takashi Ohsawa, Nobutoshi Aoki, Hiroyoshi Tanimoto, Mutsuo Morikado, Hiroomi Nakajima, Kazumi Inoh, Akihiro Nitayama

研究成果: Conference contribution

抄録

Floating Body Cell (FBC) is a one-transistor memory cell on SOI substrate, which aims high density embedded memory on SOC. In order to verify this memory cell technology, a 128Mb SOI DRAM with FBC has been designed and successfully developed. The memory cell design, and the experimental results, such as the signal and the retention characteristics, are reviewed. The results of the fabricated SOI DRAM and the prospect as embedded memory are also discussed.

本文言語English
ホスト出版物のタイトル2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06
出版ステータスPublished - 2006 12 1
外部発表はい
イベントIntegrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference - Padova, Italy
継続期間: 2006 5 242006 5 26

出版物シリーズ

名前2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06

Other

OtherIntegrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference
国/地域Italy
CityPadova
Period06/5/2406/5/26

ASJC Scopus subject areas

  • 電子工学および電気工学

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