A GIDL-current model for advanced MOSFET technologies implemented into HiSIM2

Ryosuke Inagaki, Mitiko Miura-Mattausch, Yasuaki Inoue

    研究成果: Conference contribution

    2 被引用数 (Scopus)

    抄録

    A GIDL (Gate Induced Drain Leakage) current model for advanced MOSFETs has been proposed and implemented into HiSIM2, first complete surface potential based model. The model consists of one tunneling mechanism considering two tunneling currents, band to band tunneling (BTBT) and trap assisted tunneling (TAT), and requires totally 7 model parameters covering all bias conditions. Simulation results of NFETs and PFETs reproduce measurements for any device size without binning. Validity of the model has been tested with a circuit, which is sensitive to the change of the stored charge due to tunneling current.

    本文言語English
    ホスト出版物のタイトルICCCAS 2007 - International Conference on Communications, Circuits and Systems 2007
    ページ1057-1061
    ページ数5
    出版ステータスPublished - 2008
    イベントICCCAS 2007 - International Conference on Communications, Circuits and Systems 2007 - Kokura
    継続期間: 2007 7 112007 7 13

    Other

    OtherICCCAS 2007 - International Conference on Communications, Circuits and Systems 2007
    CityKokura
    Period07/7/1107/7/13

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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