A loadless 4T SRAM powered by gate leakage current with a high tolerance for fluctuations in device parameters

Engineering & Materials Science

• Static random access storage 100%
• Leakage currents 96%
• Transistors 51%
• Data storage equipment 18%

Physics & Astronomy

• leakage 74%
• cells 48%
• field effect transistors 30%
• margins 27%
• transistors 20%
• random access memory 14%
• manufacturing 10%
• insulators 9%