A low breakdown-voltage charge pump based on Cockcroft-Walton structure

Renyuan Zhang*, Zhangcai Huang, Yasuaki Inoue

*この研究の対応する著者

    研究成果: Conference contribution

    12 被引用数 (Scopus)

    抄録

    A Cockcroft-Walton type charge pump circuit is proposed in this paper. Compared with Dickson type, each transistor and capacitor in the proposed circuit just stand against the voltage less than one Vdd, so that a low break-down voltage process can be applied to this kind of charge pump to reduce the chip area cost and break-down risk. By using the proposed structure, the performances of voltage boosting efficiency and power efficiency can reach 98.9% and 87%.

    本文言語English
    ホスト出版物のタイトルASICON 2009 - Proceedings 2009 8th IEEE International Conference on ASIC
    ページ328-331
    ページ数4
    DOI
    出版ステータスPublished - 2009
    イベント2009 8th IEEE International Conference on ASIC, ASICON 2009 - Changsha
    継続期間: 2009 10 202009 10 23

    Other

    Other2009 8th IEEE International Conference on ASIC, ASICON 2009
    CityChangsha
    Period09/10/2009/10/23

    ASJC Scopus subject areas

    • ハードウェアとアーキテクチャ
    • 電子工学および電気工学

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