A Low Phase Noise MMIC VCO in InGaP/GaAs HBT

Satoshi Kurachi*, Haiwen Liu, Jia Chen, Toshihiko Yoshimasu

*この研究の対応する著者

研究成果: Article査読

抄録

A fully integrated low phase noise voltage controlled oscillator (VCO) MMIC for millimeterwave applications was developed. The MMIC was implemented in an InGAP/GaAs heterojunction bipolar transistor (HBT) technology. This fully integrated VCO MMIC was successfully created by using a base-emitter junction varactor and microstrip lines. The VCO MMIC delivers an output power of 4.9 dBm at 31.6 GHz. Its measured phase noise at 1-MHz offset from the carrier is -121.6 dBc/Hz at an oscillation frequency of 31.6 GHz. It also provides a tuning range of 700 MHz with little variation in output power.

本文言語English
ページ(範囲)422-428
ページ数7
ジャーナルInternational Journal of Microwave and Optical Technology
1
2-I
出版ステータスPublished - 2006 8

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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