A low-power sub-1-V low-voltage reference using body effect

Jun Pan, Yasuaki Inoue, Zheng Liang, Zhangcai Huang, Weilun Huang

    研究成果: Article

    5 引用 (Scopus)

    抜粋

    A low-power sub-1-V self-biased low-voltage reference is proposed for micropower electronic applications based on body effect. The proposed reference has a very low temperature dependence by using a MOSFET with body effect compared with other reported low-power references. An HSPICE simulation shows that the reference voltage and the total power dissipation are 181 mV and 1.1 μW, respectively. The temperature coefficient of the reference voltage is 33 ppm/°C at temperatures from -40 to 100°C. The supply voltage can be as low as 0.95 V in a standard CMOS 0.35 μm technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively. Furthermore, the supply voltage dependence is -0.36 mV/V (Vdd = 0.95-3.3 V).

    元の言語English
    ページ(範囲)748-755
    ページ数8
    ジャーナルIEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
    E90-A
    発行部数4
    DOI
    出版物ステータスPublished - 2007 4

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Hardware and Architecture
    • Information Systems

    フィンガープリント A low-power sub-1-V low-voltage reference using body effect' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用