抄録
A nonvolatile MIS memory device using a ferroelectric polymer thin film in the gate insulator is proposed. In the gate electrode of the device, a ferroelectric polymer thin film is sandwiched between two insulator films to prevent carrier injection into the polymer thin film. Al-SiO2-P (VDF/TrFE)-SiO2-Si capacitors were fabricated to evaluate the basic characteristics of the device by C- V measurement, and ferroelectric polarization reversal was observed in the capacitors. Based on the C-V measurements, MIS transistors were fabricated using a process which virtually self-aligns the effective gate area to the source/drain. It was shown that the MIS transistor could be electrically programmed and erased. The on/off ratio of the transistor was greater than 106.
本文言語 | English |
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ページ(範囲) | 590-594 |
ページ数 | 5 |
ジャーナル | Japanese journal of applied physics |
巻 | 25 |
号 | 4 |
DOI | |
出版ステータス | Published - 1986 4月 |
外部発表 | はい |
ASJC Scopus subject areas
- 工学(全般)
- 物理学および天文学(全般)