A method for measuring in-plane unidirectional electrical properties in a wide band-gap semiconductor using a Brillouin scattering method

Takahiko Yanagitani*, Hiroyuki Sano, Mami Matsukawa

*この研究の対応する著者

研究成果: Article査読

5 被引用数 (Scopus)

抄録

It is difficult to measure the in-plane directional electrical properties of a crystal sample without physical contact. This paper describes the measurement of in-plane unidirectional resistivity through electromechanical coupling. The degree of coupling was determined from acoustic velocity data measured using the Brillouin scattering method. The resistivity distribution in a ZnO crystal with a resistivity of less than 1 Ω m, (common in intrinsic wide band-gap semiconductors) was clearly detected through acoustic velocity at gigahertz frequencies. The resistivity values obtained from the acoustic wave velocities showed a good correlation with standard contact electrode measurements in the resistivity range of 0.03-1 Ω m. This noncontact measurement technique should be useful for measuring the microscopic distribution of in-plane resistivity in wide band-gap semiconductors, and is a powerful tool for experiments under extreme conditions, such as high pressure and/or high temperature.

本文言語English
論文番号024910
ジャーナルJournal of Applied Physics
108
2
DOI
出版ステータスPublished - 2010 7月 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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