A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI

Hao Zhang; Mengshu Huang; Yimeng Zhang; Xutao Li; Tsutomu Yoshihara

doi:10.1109/EDSSC.2013.6628130

A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI

Hao Zhang, Mengshu Huang, Yimeng Zhang, Xutao Li, Tsutomu Yoshihara

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Combining switched-capacitor technology with body effect in MOSFETs, a nano-power CMOS voltage reference is implemented in 0.18 μm standard CMOS technology. The low output breaking threshold restriction is produced without using any component subdivision, such that chip area is saved. Measurements show that the output voltage is about 123.3 mV, temperature coefficient is about 17.6 ppm/°C, and line sensitivity is 0.15 %/V. The supply current is less than 90 nA when the supply voltage is 1 V. The area occupation is about 0.03 mm².

本文言語	English
ホスト出版物のタイトル	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOI	https://doi.org/10.1109/EDSSC.2013.6628130
出版ステータス	Published - 2013
イベント	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong 継続期間: 2013 6月 3 → 2013 6月 5

Other

Other	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
City	Hong Kong
Period	13/6/3 → 13/6/5

ASJC Scopus subject areas

ハードウェアとアーキテクチャ
電子工学および電気工学

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10.1109/EDSSC.2013.6628130

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引用スタイル

Zhang, H, Huang, M, Zhang, Y, Li, X & Yoshihara, T 2013, A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI. in 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628130, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, 13/6/3. https://doi.org/10.1109/EDSSC.2013.6628130

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AU - Yoshihara, Tsutomu

PY - 2013

Y1 - 2013

N2 - Combining switched-capacitor technology with body effect in MOSFETs, a nano-power CMOS voltage reference is implemented in 0.18 μm standard CMOS technology. The low output breaking threshold restriction is produced without using any component subdivision, such that chip area is saved. Measurements show that the output voltage is about 123.3 mV, temperature coefficient is about 17.6 ppm/°C, and line sensitivity is 0.15 %/V. The supply current is less than 90 nA when the supply voltage is 1 V. The area occupation is about 0.03 mm2.

AB - Combining switched-capacitor technology with body effect in MOSFETs, a nano-power CMOS voltage reference is implemented in 0.18 μm standard CMOS technology. The low output breaking threshold restriction is produced without using any component subdivision, such that chip area is saved. Measurements show that the output voltage is about 123.3 mV, temperature coefficient is about 17.6 ppm/°C, and line sensitivity is 0.15 %/V. The supply current is less than 90 nA when the supply voltage is 1 V. The area occupation is about 0.03 mm2.

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SN - 9781467325233

BT - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

T2 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Y2 - 3 June 2013 through 5 June 2013

ER -

A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI

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