A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI

Hao Zhang, Mengshu Huang, Yimeng Zhang, Xutao Li, Tsutomu Yoshihara

    研究成果: Conference contribution

    1 被引用数 (Scopus)

    抄録

    Combining switched-capacitor technology with body effect in MOSFETs, a nano-power CMOS voltage reference is implemented in 0.18 μm standard CMOS technology. The low output breaking threshold restriction is produced without using any component subdivision, such that chip area is saved. Measurements show that the output voltage is about 123.3 mV, temperature coefficient is about 17.6 ppm/°C, and line sensitivity is 0.15 %/V. The supply current is less than 90 nA when the supply voltage is 1 V. The area occupation is about 0.03 mm2.

    本文言語English
    ホスト出版物のタイトル2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
    DOI
    出版ステータスPublished - 2013
    イベント2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong
    継続期間: 2013 6 32013 6 5

    Other

    Other2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
    CityHong Kong
    Period13/6/313/6/5

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Electrical and Electronic Engineering

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