A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate

Toshiki Makimoto, K. Kumakura, M. Maeda, H. Yamamoto, Y. Horikoshi

    研究成果: Article

    2 引用 (Scopus)

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    A 20 nm-thick AlON buffer layer consisting of Al<inf>2</inf>O<inf>3</inf>, graded AlON, AlN, and thin Al<inf>2</inf>O<inf>3</inf> amorphous films was used to grow AlN on a sapphire substrate by molecular beam epitaxy with radio frequency plasma for nitrogen source (RF-MBE). Mirror-smooth AlN layers were successfully obtained using this new AlON buffer layer. The total threading dislocation densities of AlN layers are comparable to those reported for the high-quality AlN layers grown by RF-MBE using the conventional low-temperature (LT) buffer layer.

    元の言語English
    ページ(範囲)138-140
    ページ数3
    ジャーナルJournal of Crystal Growth
    425
    DOI
    出版物ステータスPublished - 2015 7 28

      フィンガープリント

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Materials Chemistry
    • Inorganic Chemistry

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