A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation

Takanobu Watanabe, Iwao Ohdomari

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

A newly formulated kinetic theory for thermal oxidation of silicon is reviewed. The new theory does not involve the rate-limiting step of the interfacial oxidation reaction, instead it is supposed that the diffusivity is suppressed in a strained oxide region near the SiO2/Si interface. The expression of the parabolic constant is the same as that of the Deal-Grove model, while the linear constant makes a clear distinction with the model. The estimated thickness using the new expression is close to 1 nm, which compares well with the thickness of the structural transition layer. The origin of the deviation from the linear-parabolic relationship observed at initial oxidation stages can be explained by the enhanced diffusion hypothesis, which is opposite conclusion to the Deal-Grove theory.

本文言語English
ホスト出版物のタイトルECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics
ページ465-481
ページ数17
3
DOI
出版ステータスPublished - 2007 12 1
イベントSymposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting - Chicago, IL, United States
継続期間: 2007 5 62007 5 11

出版物シリーズ

名前ECS Transactions
番号3
6
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Conference

ConferenceSymposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period07/5/607/5/11

ASJC Scopus subject areas

  • Engineering(all)

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