TY - JOUR
T1 - A new type of SRAM using DRAM technology
AU - Kihara, Yuji
AU - Okamura, Leona
AU - Nakashima, Yasushi
AU - Izutsu, Takashi
AU - Nakamoto, Masayuki
AU - Yoshihara, Tsutomu
PY - 2007/9
Y1 - 2007/9
N2 - 16-Mbit low-power SRAM (SuperSRAM) was developed using a new memory cell technology which makes use of DRAM technology and TFT technology, which has a record of actual performance in SRAM. For SRAM, the problems of soft errors and operation at the lower limits of Vcc have manifested at the increasing levels of miniaturization, and increases in capacity have become increasingly difficult. Nonetheless, complete compatibility with asynchronous SRAM has been implemented with the free use of circuit technology, while various problems have been resolved without cost increases using DRAM memory cell technology, which reduces surface area. The characteristics of such devices are discussed predominantly from the perspective of design.
AB - 16-Mbit low-power SRAM (SuperSRAM) was developed using a new memory cell technology which makes use of DRAM technology and TFT technology, which has a record of actual performance in SRAM. For SRAM, the problems of soft errors and operation at the lower limits of Vcc have manifested at the increasing levels of miniaturization, and increases in capacity have become increasingly difficult. Nonetheless, complete compatibility with asynchronous SRAM has been implemented with the free use of circuit technology, while various problems have been resolved without cost increases using DRAM memory cell technology, which reduces surface area. The characteristics of such devices are discussed predominantly from the perspective of design.
KW - Low-voltage operation
KW - Small-area SRAM memory cells
KW - Soft error-free
KW - SRAM
KW - SuperSRAM
UR - http://www.scopus.com/inward/record.url?scp=34548643216&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34548643216&partnerID=8YFLogxK
U2 - 10.1002/ecjb.20330
DO - 10.1002/ecjb.20330
M3 - Article
AN - SCOPUS:34548643216
VL - 90
SP - 32
EP - 41
JO - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
JF - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
SN - 8756-663X
IS - 9
ER -