A new type of SRAM using DRAM technology

Yuji Kihara*, Leona Okamura, Yasushi Nakashima, Takashi Izutsu, Masayuki Nakamoto, Tsutomu Yoshihara

*この研究の対応する著者

    研究成果査読

    抄録

    16-Mbit low-power SRAM (SuperSRAM) was developed using a new memory cell technology which makes use of DRAM technology and TFT technology, which has a record of actual performance in SRAM. For SRAM, the problems of soft errors and operation at the lower limits of Vcc have manifested at the increasing levels of miniaturization, and increases in capacity have become increasingly difficult. Nonetheless, complete compatibility with asynchronous SRAM has been implemented with the free use of circuit technology, while various problems have been resolved without cost increases using DRAM memory cell technology, which reduces surface area. The characteristics of such devices are discussed predominantly from the perspective of design.

    本文言語English
    ページ(範囲)32-41
    ページ数10
    ジャーナルElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
    90
    9
    DOI
    出版ステータスPublished - 2007 9

    ASJC Scopus subject areas

    • 電子工学および電気工学

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