A non-volatile, bistable, and rewritable memory device fabricated with poly(nitroxide radical) and silver salt layers

Yasunori Yonekuta, Kenji Honda, Hiroyuki Nishide

研究成果: Article査読

20 被引用数 (Scopus)

抄録

A non-volatile, bistable, and rewritable organic memory device was successfully fabricated with the layers of poly(2,2,6,6-tetramethylpiperidine-1-oxyl methacrylate) (PTMA) and poly(methyl methacrylate) (PMMA) containing silver salt. The PTMA layer was employed as a p-dopable material, while the silver salt-dispersed PMMA layer acted as an n-dopable material. The ON-OFF ratio between low-conductivity and high-conductivity states amounted to more than four orders of magnitude, and the retention time was longer than 103 sec. The device was characterized by excellent rewritability.

本文言語English
ページ(範囲)281-284
ページ数4
ジャーナルPolymers for Advanced Technologies
19
4
DOI
出版ステータスPublished - 2008 4

ASJC Scopus subject areas

  • Polymers and Plastics

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