A nonlinear drain resistance pHEMT model for millimeter-wave high power Amplifiers

Akira Inoue*, Hirotaka Amasuga, Seiki Goto, Moriyasu Miyazaki

*この研究の対応する著者

研究成果: Conference contribution

抄録

A high power pHEMT with longer drain-gate separation can operate at higher voltage. However, it shows large output power loss at millimeter-wave in addition to the conventional parasitic power dissipation. The nonlinear drain resistance Rd of the pHEMT is found to cause the large power loss, although it behaves as a conventional resistor at low frequency. The nonlinearity of the Rd is modeled and shows good agreement with the measurement. Comparisons of pHEMTs with different nonlinear Rd also support the model.

本文言語English
ホスト出版物のタイトル2008 European Microwave Integrated Circuit Conference, EuMIC 2008
ページ282-285
ページ数4
DOI
出版ステータスPublished - 2008
外部発表はい
イベント2008 European Microwave Integrated Circuit Conference, EuMIC 2008 - Amsterdam, Netherlands
継続期間: 2008 10月 272008 10月 31

出版物シリーズ

名前2008 European Microwave Integrated Circuit Conference, EuMIC 2008

Conference

Conference2008 European Microwave Integrated Circuit Conference, EuMIC 2008
国/地域Netherlands
CityAmsterdam
Period08/10/2708/10/31

ASJC Scopus subject areas

  • 電子工学および電気工学

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