A nonvolatile programmable solid electrolyte nanometer switch

T. Sakamoto; S. Kaeriyama; H. Sunamura; M. Mizuno; H. Kawaura; T. Hasegawa; K. Terabe; T. Nakayama; M. Aono

A nonvolatile programmable solid electrolyte nanometer switch

T. Sakamoto^*, S. Kaeriyama, H. Sunamura, M. Mizuno, H. Kawaura, T. Hasegawa, K. Terabe, T. Nakayama, M. Aono

^*この研究の対応する著者

研究成果: Conference article › 査読

抄録

A nanometer-scale nonvolatile switch composed of a solid electrolyte is <30nm and has an on-resistance <100Ω. A field programmable logic device and 1kb nonvolatile memory using the switch are demonstrated. The crossbar switch is fabricated in a 1.8V 0.18μm CMOS process.

本文言語	English
ページ（範囲）	234-235+547
ジャーナル	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
巻	47
出版ステータス	Published - 2003 12 1
外部発表	はい
イベント	Digest of Technical Papers - IEEE International Solid-State Circuits Conference: Visuals Supplement - San Francisco, CA., United States 継続期間: 2003 2 15 → 2003 2 19

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

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title = "A nonvolatile programmable solid electrolyte nanometer switch",

abstract = "A nanometer-scale nonvolatile switch composed of a solid electrolyte is <30nm and has an on-resistance <100Ω. A field programmable logic device and 1kb nonvolatile memory using the switch are demonstrated. The crossbar switch is fabricated in a 1.8V 0.18μm CMOS process.",

author = "T. Sakamoto and S. Kaeriyama and H. Sunamura and M. Mizuno and H. Kawaura and T. Hasegawa and K. Terabe and T. Nakayama and M. Aono",

year = "2003",

month = dec,

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language = "English",

volume = "47",

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journal = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

issn = "0193-6530",

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note = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference: Visuals Supplement ; Conference date: 15-02-2003 Through 19-02-2003",

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TY - JOUR

T1 - A nonvolatile programmable solid electrolyte nanometer switch

AU - Sakamoto, T.

AU - Kaeriyama, S.

AU - Sunamura, H.

AU - Mizuno, M.

AU - Kawaura, H.

AU - Hasegawa, T.

AU - Terabe, K.

AU - Nakayama, T.

AU - Aono, M.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - A nanometer-scale nonvolatile switch composed of a solid electrolyte is <30nm and has an on-resistance <100Ω. A field programmable logic device and 1kb nonvolatile memory using the switch are demonstrated. The crossbar switch is fabricated in a 1.8V 0.18μm CMOS process.

AB - A nanometer-scale nonvolatile switch composed of a solid electrolyte is <30nm and has an on-resistance <100Ω. A field programmable logic device and 1kb nonvolatile memory using the switch are demonstrated. The crossbar switch is fabricated in a 1.8V 0.18μm CMOS process.

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M3 - Conference article

AN - SCOPUS:2442717823

VL - 47

SP - 234-235+547

JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

SN - 0193-6530

T2 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference: Visuals Supplement

Y2 - 15 February 2003 through 19 February 2003

ER -

A nonvolatile programmable solid electrolyte nanometer switch

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