A novel current reuse wideband amplifier using 130 nm Si CMOS technology for 22 - 29 GHz applications

Q. Liu, J. Sun, Y. J. Suh, S. Kurachi, N. Itoh, T. Yoshimasu

研究成果: Conference contribution

抜粋

In this paper, a novel wideband amplifier is proposed for 22 - 29 GHz UWB applications in 0.13 um Si CMOS technology. In order to reduce the de current of the amplifier, a novel current reuse technique is adopted in a casco de CMOS transistor. In addition, a low-pass type feedback circuit for the first stage and an inductive feedback circuit for the second stage are designed to make the bandwidth wider. It is expected that the wideband amplifier exhibits a gain of 11.3 dB +/- 1.2 dB with a dc power consumption as low as 9.8 mW.

元の言語English
ホスト出版物のタイトル2009 International Conference on Communications, Circuits and Systems, ICCCAS 2009
ページ807-809
ページ数3
出版物ステータスPublished - 2009 12 31
イベント2009 International Conference on Communications, Circuits and Systems, ICCCAS 2009 - Milpitas, CA, United States
継続期間: 2009 7 232009 7 25

出版物シリーズ

名前2009 International Conference on Communications, Circuits and Systems, ICCCAS 2009

Conference

Conference2009 International Conference on Communications, Circuits and Systems, ICCCAS 2009
United States
Milpitas, CA
期間09/7/2309/7/25

    フィンガープリント

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

これを引用

Liu, Q., Sun, J., Suh, Y. J., Kurachi, S., Itoh, N., & Yoshimasu, T. (2009). A novel current reuse wideband amplifier using 130 nm Si CMOS technology for 22 - 29 GHz applications. : 2009 International Conference on Communications, Circuits and Systems, ICCCAS 2009 (pp. 807-809). [5250377] (2009 International Conference on Communications, Circuits and Systems, ICCCAS 2009).