A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss

Suyang Liu, Yue Zhang, Zijian Zhang, Masahide Inuishi

研究成果: Conference contribution

抄録

We propose a novel design of N-channel Reverse Conducting lateral IGBT (RC-LIGBT) based on silicon-on-insulator (SOI) technology with replacing an N+ anode by an NPN bipolar in the embedded diode region. The snap-back effect can be suppressed drastically by the proposed structure with simple fabrication process using one additional masking step of ion implantation as verified by the process and the device simulation. The use of trench structure and injection control drastically improves the trade of relationship between the turn-off energy loss and the structure shows the dynamic and the static forward blocking voltage of nearly 400V. The proposed structure has stronger thermal stability and can reduce the area penalty compared with the other structures ever reported.

本文言語English
ホスト出版物のタイトル6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
出版社Institute of Electrical and Electronics Engineers Inc.
ページ204-206
ページ数3
ISBN(電子版)9781665421775
DOI
出版ステータスPublished - 2022
イベント6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 - Virtual, Online, Japan
継続期間: 2022 3月 62022 3月 9

出版物シリーズ

名前6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Conference

Conference6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
国/地域Japan
CityVirtual, Online
Period22/3/622/3/9

ASJC Scopus subject areas

  • プロセス化学およびプロセス工学
  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学
  • 産業および生産工学
  • 電子材料、光学材料、および磁性材料

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