We propose a novel extraction technique of the control gate capacitance coupling coefficient(αg) for stacked gate flash memory cell. Five novel test patterns that the CBCM method is applied to, are developed to directly measure all the capacitances connected to the floating gate. Comparison of extracted αg with the TCAD result proves the validity of this technique. Moreover, we have confirmed that conventional techniques, which use the channel current characteristics, overestimate the αg variation due to channel mobility variation. Therefore direct αg extraction using our proposed technique is necessary for precise process monitoring.
|出版ステータス||Published - 2005 11月 15|
|イベント||ICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures - Leuven, Belgium|
継続期間: 2005 4月 4 → 2005 4月 7
|Other||ICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures|
|Period||05/4/4 → 05/4/7|
ASJC Scopus subject areas