@inproceedings{ffcfc7322d5a4707b4d7cab9fff01685,
title = "A novel W-band bottom-LO-configured sub-harmonic mixer IC in 130-nm SiGe BiCMOS",
abstract = "This paper presents a novel sub-harmonic mixer (SHM) IC design for W-band automotive applications in 130-nm SiGe BiCMOS technology. The SHM makes use of a Common Emitter Common Collector Transistor Pair (CECCTP) structure with bottom-LO-configuration. On-chip Marchand balun is utilized for W-band on-wafer measurement. The novel SHM exhibits a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of-7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA with a supply voltage of 3.3 V.",
keywords = "130-nm SiGe BiCMOS, Bottom-LO-configuratoin, CECCTP, Low power, Marchand Balun, Sub-harmonic mixer, W-band",
author = "Xin Yang and Xiao Xu and Zheng Sun and Takayuki Shibata and Toshihiko Yoshimasu",
note = "Publisher Copyright: {\textcopyright} 2015 EuMA. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; 10th European Microwave Integrated Circuits Conference, EuMIC 2015 ; Conference date: 07-09-2015 Through 08-09-2015",
year = "2015",
month = dec,
day = "2",
doi = "10.1109/EuMIC.2015.7345096",
language = "English",
series = "European Microwave Week 2015:",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "172--175",
booktitle = "European Microwave Week 2015",
}