A pattern edge profile simulation for oblique ion milling

Noriyoshi Yamauchi, Toshiaki Yachi, Tsutomu Wada

研究成果: Article査読

17 被引用数 (Scopus)

抄録

An oblique ion milling simulation method is proposed in which etching and redeposition at the pattern side wall are taken into account. The effective etching rate at the pattern side wall is determined as the difference between the etching rate given by the angular dependency and the redeposition rate. The redeposition rate is assumed to be proportional to the etching rate of the material to be etched at the flat surface. A pattern edge profile simulation is carried out for an oblique ion milling of silicon. The simulation results agreed well with the experimental results with a relatively large ion beam incident angle.

本文言語English
ページ(範囲)1552-1557
ページ数6
ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
2
4
DOI
出版ステータスPublished - 1984 10
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜

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