A pressure sensitive ionic gel FET for tactile sensing

Shunsuke Yamada, T. Sato, H. Toshiyoshi

研究成果: Article

6 引用 (Scopus)

抄録

Field-effect-transistor (FET) is combined with an ionic gel to realize a pressure sensitive ionic-gel field-effect-transistor (PSG-FET) of high sensitivity and low operational voltage. The ionic gels form a layer of charge accumulation in a nanometric scale called the electrical double layer (EDL) on each electrode upon voltage application and exhibit quite high capacitance. The source-drain current through the ZnO channel increases from the initial 44 nA (without pressure) to 783 μA (with pressure, 7 kPa), yielding an ON/OFF contrast as large as 1.7 × 104, due to EDLs, which is interpreted as a pressure sensitivity of 2.2 × 103 kPa-1. Judging from the drain current and the gate voltage properties, the threshold voltage is calculated to be 2.8 V owing the large capacitance created by the ionic gel.

元の言語English
記事番号253501
ジャーナルApplied Physics Letters
110
発行部数25
DOI
出版物ステータスPublished - 2017 6 19
外部発表Yes

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field effect transistors
gels
electric potential
capacitance
threshold voltage
electrodes
sensitivity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

A pressure sensitive ionic gel FET for tactile sensing. / Yamada, Shunsuke; Sato, T.; Toshiyoshi, H.

:: Applied Physics Letters, 巻 110, 番号 25, 253501, 19.06.2017.

研究成果: Article

Yamada, S, Sato, T & Toshiyoshi, H 2017, 'A pressure sensitive ionic gel FET for tactile sensing', Applied Physics Letters, 巻. 110, 番号 25, 253501. https://doi.org/10.1063/1.4986198
Yamada, Shunsuke ; Sato, T. ; Toshiyoshi, H. / A pressure sensitive ionic gel FET for tactile sensing. :: Applied Physics Letters. 2017 ; 巻 110, 番号 25.
@article{63cc759c7a4540d7933206979ba6511f,
title = "A pressure sensitive ionic gel FET for tactile sensing",
abstract = "Field-effect-transistor (FET) is combined with an ionic gel to realize a pressure sensitive ionic-gel field-effect-transistor (PSG-FET) of high sensitivity and low operational voltage. The ionic gels form a layer of charge accumulation in a nanometric scale called the electrical double layer (EDL) on each electrode upon voltage application and exhibit quite high capacitance. The source-drain current through the ZnO channel increases from the initial 44 nA (without pressure) to 783 μA (with pressure, 7 kPa), yielding an ON/OFF contrast as large as 1.7 × 104, due to EDLs, which is interpreted as a pressure sensitivity of 2.2 × 103 kPa-1. Judging from the drain current and the gate voltage properties, the threshold voltage is calculated to be 2.8 V owing the large capacitance created by the ionic gel.",
author = "Shunsuke Yamada and T. Sato and H. Toshiyoshi",
year = "2017",
month = "6",
day = "19",
doi = "10.1063/1.4986198",
language = "English",
volume = "110",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "25",

}

TY - JOUR

T1 - A pressure sensitive ionic gel FET for tactile sensing

AU - Yamada, Shunsuke

AU - Sato, T.

AU - Toshiyoshi, H.

PY - 2017/6/19

Y1 - 2017/6/19

N2 - Field-effect-transistor (FET) is combined with an ionic gel to realize a pressure sensitive ionic-gel field-effect-transistor (PSG-FET) of high sensitivity and low operational voltage. The ionic gels form a layer of charge accumulation in a nanometric scale called the electrical double layer (EDL) on each electrode upon voltage application and exhibit quite high capacitance. The source-drain current through the ZnO channel increases from the initial 44 nA (without pressure) to 783 μA (with pressure, 7 kPa), yielding an ON/OFF contrast as large as 1.7 × 104, due to EDLs, which is interpreted as a pressure sensitivity of 2.2 × 103 kPa-1. Judging from the drain current and the gate voltage properties, the threshold voltage is calculated to be 2.8 V owing the large capacitance created by the ionic gel.

AB - Field-effect-transistor (FET) is combined with an ionic gel to realize a pressure sensitive ionic-gel field-effect-transistor (PSG-FET) of high sensitivity and low operational voltage. The ionic gels form a layer of charge accumulation in a nanometric scale called the electrical double layer (EDL) on each electrode upon voltage application and exhibit quite high capacitance. The source-drain current through the ZnO channel increases from the initial 44 nA (without pressure) to 783 μA (with pressure, 7 kPa), yielding an ON/OFF contrast as large as 1.7 × 104, due to EDLs, which is interpreted as a pressure sensitivity of 2.2 × 103 kPa-1. Judging from the drain current and the gate voltage properties, the threshold voltage is calculated to be 2.8 V owing the large capacitance created by the ionic gel.

UR - http://www.scopus.com/inward/record.url?scp=85021173076&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85021173076&partnerID=8YFLogxK

U2 - 10.1063/1.4986198

DO - 10.1063/1.4986198

M3 - Article

AN - SCOPUS:85021173076

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 253501

ER -