A reliability of silicon-crystalline quartz bonding through reducing of the residual stresses

Yury Zimin*, Toshitsugu Ueda

*この研究の対応する著者

    研究成果: Conference contribution

    抄録

    In this work, a new additional opportunity to reduce the residual stresses when bonding a pair of dissimilar materials such as silicon and crystalline quartz has been revealed as a result of theoretical calculations. In parallel with a traditional method, based on lowering of bonding temperature, additional reduction of the residual stresses becomes possible owing to difference in elastic properties of dissimilar materials of the pair. In the case of coupled plates, with different coefficients of thermal expansion, the residual stresses can be reduced if the following two conditions hold simultaneously: E 1/(1-v 1)< E 2/(1-v 2) and h 1<h 2. Here E i- the Young's modulus, v i- the Poisson ratio, and hi- the thickness of the first (i=1) and the second (i=2) bonded plates respectively. For the quartz/silicon pair, the residual stresses at the interface will be approximately 20% lower if h 1/h 2 =0.2 as compared the case when both wafers are of equal in thickness.

    本文言語English
    ホスト出版物のタイトルProceedings of IEEE Sensors
    ページ951-953
    ページ数3
    DOI
    出版ステータスPublished - 2011
    イベント10th IEEE SENSORS Conference 2011, SENSORS 2011 - Limerick
    継続期間: 2011 10 282011 10 31

    Other

    Other10th IEEE SENSORS Conference 2011, SENSORS 2011
    CityLimerick
    Period11/10/2811/10/31

    ASJC Scopus subject areas

    • 電子工学および電気工学

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