A self assembly monolayer activated electroless deposition process for interconnect and contact applications

Y. Shacham-Diamand, M. Yoshino, A. Duhin, Y. Sverdlov, T. Osaka

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

The use of self assembly monolayer has been demonstrated for direct plating on interlevel dielectric for interconnects applications. In this work we show an additional feature of that technique for direct deposition on contact application. We also present an integrated process where the self assembly activation is used for both the deposition of the barrier layer which can be used for both the contact material and the source for the silicidation process. Later all wet electroless process can be used for the contact buildup and the capping layer deposition. In this work we review the depositions of electroless Nickel alloy on various inter level dielectrics and on Si. We also discuss the integration process including deposition on exiting silicide or possible self silicidation for the formation of self aligned NiSi. We describe the process outlines and present material and electrical properties.

本文言語English
ホスト出版物のタイトルAdvanced Metallization Conference 2006, AMC 2006
ページ657-662
ページ数6
出版ステータスPublished - 2006 12 1
イベント23rd Annual Advanced Metallization Conference, AMC 2006 - San Diego, CA, United States
継続期間: 2006 10 172006 10 19

出版物シリーズ

名前Advanced Metallization Conference (AMC)
2006
ISSN(印刷版)1540-1766

Conference

Conference23rd Annual Advanced Metallization Conference, AMC 2006
国/地域United States
CitySan Diego, CA
Period06/10/1706/10/19

ASJC Scopus subject areas

  • 化学工学(全般)

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