A simple and practical statistical device model for analog LSI designs

Jing Wang, Li Ding, Yasuaki Inoue

    研究成果: Conference contribution

    2 引用 (Scopus)

    抜粋

    With the scaling of CMOS devices toward their ultimate dimensions, device performance variability induced by process variation has become a critical issue in analog LS I designs. Statistical device model library building based on statistical device model considering the process variation accurately is useful to predict the performance of analog LS I designs. However, conventional statistical device models are either complicated or not accurate enough. Therefore, a simple and practical statistical device model for analog LS I designs is proposed in this paper. Simultaneously, a simple method to extract model parameters is also proposed. Statistical analysis results of 0.65um CMOS Op-Amp based on the proposed model using Monte Carlo simulation have a good agreement with the chip measurement results.

    元の言語English
    ホスト出版物のタイトル2013 International Conference on Communications, Circuits and Systems, ICCCAS 2013
    出版者IEEE Computer Society
    ページ408-412
    ページ数5
    1
    DOI
    出版物ステータスPublished - 2013
    イベント2013 International Conference on Communications, Circuits and Systems, ICCCAS 2013 - Chengdu
    継続期間: 2013 11 152013 11 17

    Other

    Other2013 International Conference on Communications, Circuits and Systems, ICCCAS 2013
    Chengdu
    期間13/11/1513/11/17

    ASJC Scopus subject areas

    • Computer Networks and Communications
    • Hardware and Architecture

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  • これを引用

    Wang, J., Ding, L., & Inoue, Y. (2013). A simple and practical statistical device model for analog LSI designs. : 2013 International Conference on Communications, Circuits and Systems, ICCCAS 2013 (巻 1, pp. 408-412). [6765263] IEEE Computer Society. https://doi.org/10.1109/ICCCAS.2013.6765263