A simple index to restrain abnormal protrusions in films fabricated using CD under diffusion-limited conditions

Yuya Kajikawa*, Suguru Noda, Hiroshi Komiyama

*この研究の対応する著者

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Cauliflower-like protrusions formed in CVD processes under diffusion-limited conditions have been studied both experimentally and theoretically. Both approaches indicate that the difference in diffusion fluxes to the film and to the protrusions controls the growth of such protrusions. However, direct comparisons of these two approaches have never been done, probably due to the complexity of the theoretical models. To simplify model protrusion growth, we developed a one-dimensional (ID) analytical model by hypothesizing the diffusion of growth species in the boundary layer above a growing film. Based on this model, we propose a non-dimensional quantity, k s/D, as an index of protrusion growth (D is the diffusion coefficient of the growth species, ks is the surface reaction-rate coefficient, and f film thickness). This index represents more directly the protrusion growth than does the previously proposed index, the Damköhler number, Da = k sδ/D, where δ is boundary layer thickness. To obtain smooth, protrusion-free films, D/k, should be kept larger than the desired film thickness. By controlling the process conditions to satisfy this index, we successfully fabricated protrusion-free films with SiC deposition from dichloro-dimethylsilane (DDS).

本文言語English
ページ(範囲)221-228
ページ数8
ジャーナルChemical Vapor Deposition
10
4
DOI
出版ステータスPublished - 2004 9月
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 表面および界面
  • プロセス化学およびプロセス工学

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