A simple lithographic method employing 172 nm vacuum ultraviolet light to prepare positive- and negative-tone poly(methyl methacrylate) patterns

S. Asakura*, A. Hozumi, T. Yamaguchi, A. Fuwa

*この研究の対応する著者

研究成果: Article査読

9 被引用数 (Scopus)

抄録

We successfully prepared both positive- and negative-tone patterns by applying poly(methyl methacrylate) (PMMA) as a photoresist. A positive-pattern was prepared by lithography through a photomask using 172 nm vacuum ultraviolet (VUV) light under the pressure of 103 Pa. A negative-pattern was prepared using the same VUV light under the reduced pressure of 10 Pa, followed by rinsing with toluene solution. At 103 Pa, the irradiated PMMA was effectively decomposed and eliminated. On the other hand, at 10 Pa, the irradiated PMMA became cured and resistant to etching. We subsequently utilized these positive- and negative-tone patterns as templates on indium-tin-oxide surfaces to electrodeposit copper microstructures with 10 μm lines and spaces.

本文言語English
ページ(範囲)237-240
ページ数4
ジャーナルThin Solid Films
500
1-2
DOI
出版ステータスPublished - 2006 4月 3

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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