A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering

Shinji Takayanagi, Takahiko Yanagitani, Mami Matsukawa, Yoshiaki Watanabe

研究成果: Conference contribution

3 引用 (Scopus)

抄録

C-axis parallel-oriented ZnO piezoelectric films, (112̄0) or (101̄0) textured films, are good candidates for shear mode devices. Ion bombardment to the substrate during film deposition suppresses the usual (0001)-oriented grain growth, resulting in the preferential development of unusual (112̄0) or (101̄0) orientation. This is because the most densely packed (0001) plane should incur more damage by ion bombardment than the (112̄0) and (101̄0) planes. In this study, we propose RF substrate bias RF magnetron sputtering method to induce the ion bombardment to the substrate. This method made possible to form preferential (112̄0) or (101̄0) orientation in the conditions where these orientations could not be formed in case of DC bias.

元の言語English
ホスト出版物のタイトルProceedings - IEEE Ultrasonics Symposium
ページ1060-1063
ページ数4
DOI
出版物ステータスPublished - 2010
外部発表Yes
イベント2010 IEEE International Ultrasonics Symposium, IUS 2010 - San Diego, CA, United States
継続期間: 2010 10 112010 10 14

Other

Other2010 IEEE International Ultrasonics Symposium, IUS 2010
United States
San Diego, CA
期間10/10/1110/10/14

Fingerprint

bombardment
sputtering
ions
magnetron sputtering
direct current
shear
damage

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

これを引用

Takayanagi, S., Yanagitani, T., Matsukawa, M., & Watanabe, Y. (2010). A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering. : Proceedings - IEEE Ultrasonics Symposium (pp. 1060-1063). [5935655] https://doi.org/10.1109/ULTSYM.2010.5935655

A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering. / Takayanagi, Shinji; Yanagitani, Takahiko; Matsukawa, Mami; Watanabe, Yoshiaki.

Proceedings - IEEE Ultrasonics Symposium. 2010. p. 1060-1063 5935655.

研究成果: Conference contribution

Takayanagi, S, Yanagitani, T, Matsukawa, M & Watanabe, Y 2010, A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering. : Proceedings - IEEE Ultrasonics Symposium., 5935655, pp. 1060-1063, 2010 IEEE International Ultrasonics Symposium, IUS 2010, San Diego, CA, United States, 10/10/11. https://doi.org/10.1109/ULTSYM.2010.5935655
Takayanagi S, Yanagitani T, Matsukawa M, Watanabe Y. A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering. : Proceedings - IEEE Ultrasonics Symposium. 2010. p. 1060-1063. 5935655 https://doi.org/10.1109/ULTSYM.2010.5935655
Takayanagi, Shinji ; Yanagitani, Takahiko ; Matsukawa, Mami ; Watanabe, Yoshiaki. / A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering. Proceedings - IEEE Ultrasonics Symposium. 2010. pp. 1060-1063
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