A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering

Shinji Takayanagi*, Takahiko Yanagitani, Mami Matsukawa, Yoshiaki Watanabe

*この研究の対応する著者

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

C-axis parallel-oriented ZnO piezoelectric films, (112̄0) or (101̄0) textured films, are good candidates for shear mode devices. Ion bombardment to the substrate during film deposition suppresses the usual (0001)-oriented grain growth, resulting in the preferential development of unusual (112̄0) or (101̄0) orientation. This is because the most densely packed (0001) plane should incur more damage by ion bombardment than the (112̄0) and (101̄0) planes. In this study, we propose RF substrate bias RF magnetron sputtering method to induce the ion bombardment to the substrate. This method made possible to form preferential (112̄0) or (101̄0) orientation in the conditions where these orientations could not be formed in case of DC bias.

本文言語English
ホスト出版物のタイトル2010 IEEE International Ultrasonics Symposium, IUS 2010
ページ1060-1063
ページ数4
DOI
出版ステータスPublished - 2010 12 1
外部発表はい
イベント2010 IEEE International Ultrasonics Symposium, IUS 2010 - San Diego, CA, United States
継続期間: 2010 10 112010 10 14

出版物シリーズ

名前Proceedings - IEEE Ultrasonics Symposium
ISSN(印刷版)1051-0117

Other

Other2010 IEEE International Ultrasonics Symposium, IUS 2010
国/地域United States
CitySan Diego, CA
Period10/10/1110/10/14

ASJC Scopus subject areas

  • 音響学および超音波学

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