A simple technique for performing evaporation of quaterthiophene below the melting temperature for vapour phase polymerisation and physical vapour deposition

David Mayevsky, Jacob Tosado, Christopher D. Easton, Chun Hin Ng, Michael S. Fuhrer, Bjorn Winther Jensen

研究成果: Article

1 引用 (Scopus)

抄録

By adjusting the molecular ordering of the evaporant used for vapour deposition, anappreciable evaporant partial pressure was achieved at temperatures far below the evaporant melting temperature with evaporation occurring over 100° below the melting temperature. The molecular ordering was adjusted by dissolving or dispersing the evaporant (MW > 300) in an ionic liquid or a high MW non-vaporisable polymer (MW ∼ 20000).

元の言語English
ページ(範囲)99806-99811
ページ数6
ジャーナルRSC Advances
5
発行部数121
DOI
出版物ステータスPublished - 2015
外部発表Yes

Fingerprint

Physical vapor deposition
Melting point
Evaporation
Vapors
Polymerization
Ionic Liquids
Vapor deposition
Ionic liquids
Partial pressure
Polymers
Temperature

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Chemistry(all)

これを引用

A simple technique for performing evaporation of quaterthiophene below the melting temperature for vapour phase polymerisation and physical vapour deposition. / Mayevsky, David; Tosado, Jacob; Easton, Christopher D.; Ng, Chun Hin; Fuhrer, Michael S.; Winther Jensen, Bjorn.

:: RSC Advances, 巻 5, 番号 121, 2015, p. 99806-99811.

研究成果: Article

Mayevsky, David ; Tosado, Jacob ; Easton, Christopher D. ; Ng, Chun Hin ; Fuhrer, Michael S. ; Winther Jensen, Bjorn. / A simple technique for performing evaporation of quaterthiophene below the melting temperature for vapour phase polymerisation and physical vapour deposition. :: RSC Advances. 2015 ; 巻 5, 番号 121. pp. 99806-99811.
@article{360134e784d645dda381522c70ef2ba1,
title = "A simple technique for performing evaporation of quaterthiophene below the melting temperature for vapour phase polymerisation and physical vapour deposition",
abstract = "By adjusting the molecular ordering of the evaporant used for vapour deposition, anappreciable evaporant partial pressure was achieved at temperatures far below the evaporant melting temperature with evaporation occurring over 100° below the melting temperature. The molecular ordering was adjusted by dissolving or dispersing the evaporant (MW > 300) in an ionic liquid or a high MW non-vaporisable polymer (MW ∼ 20000).",
author = "David Mayevsky and Jacob Tosado and Easton, {Christopher D.} and Ng, {Chun Hin} and Fuhrer, {Michael S.} and {Winther Jensen}, Bjorn",
year = "2015",
doi = "10.1039/c5ra16897j",
language = "English",
volume = "5",
pages = "99806--99811",
journal = "RSC Advances",
issn = "2046-2069",
publisher = "Royal Society of Chemistry",
number = "121",

}

TY - JOUR

T1 - A simple technique for performing evaporation of quaterthiophene below the melting temperature for vapour phase polymerisation and physical vapour deposition

AU - Mayevsky, David

AU - Tosado, Jacob

AU - Easton, Christopher D.

AU - Ng, Chun Hin

AU - Fuhrer, Michael S.

AU - Winther Jensen, Bjorn

PY - 2015

Y1 - 2015

N2 - By adjusting the molecular ordering of the evaporant used for vapour deposition, anappreciable evaporant partial pressure was achieved at temperatures far below the evaporant melting temperature with evaporation occurring over 100° below the melting temperature. The molecular ordering was adjusted by dissolving or dispersing the evaporant (MW > 300) in an ionic liquid or a high MW non-vaporisable polymer (MW ∼ 20000).

AB - By adjusting the molecular ordering of the evaporant used for vapour deposition, anappreciable evaporant partial pressure was achieved at temperatures far below the evaporant melting temperature with evaporation occurring over 100° below the melting temperature. The molecular ordering was adjusted by dissolving or dispersing the evaporant (MW > 300) in an ionic liquid or a high MW non-vaporisable polymer (MW ∼ 20000).

UR - http://www.scopus.com/inward/record.url?scp=84948400402&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84948400402&partnerID=8YFLogxK

U2 - 10.1039/c5ra16897j

DO - 10.1039/c5ra16897j

M3 - Article

AN - SCOPUS:84948400402

VL - 5

SP - 99806

EP - 99811

JO - RSC Advances

JF - RSC Advances

SN - 2046-2069

IS - 121

ER -