A study of the electronic structure of FeSe1-xTex chalcogenides by Fe and Se K-edge x-ray absorption near edge structure measurements

B. Joseph, A. Iadecola, L. Simonelli, Y. Mizuguchi, Y. Takano, T. Mizokawa, N. L. Saini

研究成果: Article査読

44 被引用数 (Scopus)

抄録

Fe K-edge and Se K-edge x-ray absorption near edge structure (XANES) measurements are used to study the FeSe1-xTex electronic structure of chalcogenides. An intense Fe K-edge pre-edge peak due to Fe 1s →3d (and admixed Se/Te p states) is observed, showing substantial change with Te substitution and x-ray polarization. The main white line peak in the Se K-edge XANES due to Se 1s→ 4p transition appears similar to the one expected for Se2- systems and changes with Te substitution. Polarization dependence reveals that unoccupied Se orbitals near the Fermi level have predominant px,y character. The results provide key information on the hybridization of Fe 3d and chalcogen p states in the Fe-based chalcogenide superconductors.

本文言語English
論文番号485702
ジャーナルJournal of Physics Condensed Matter
22
48
DOI
出版ステータスPublished - 2010 12 8
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学

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