A sub-1-V self-biased low-voltage low-power voltage reference is presented for micropower electronic applications. And the proposed circuit has very low temperature dependence by using a back-gate connection MOSFET. An Hspice simulation shows that the reference voltage and total power dissipation are 181 mV and 1.1 μW, respectively. The temperature coefficient of the reference voltage is 33 ppm/°C within a temperature range from -40 to 100°C. The supply voltage dependence is -0.36 m V/V (Vdd=0.95-3.3 V). Supply voltage can be as low as 0.95 V in a standard CMOS 0.35 °m technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively.
|ホスト出版物のタイトル||2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings|
|出版ステータス||Published - 2006|
|イベント||2006 International Conference on Communications, Circuits and Systems, ICCCAS - Guilin|
継続期間: 2006 6 25 → 2006 6 28
|Other||2006 International Conference on Communications, Circuits and Systems, ICCCAS|
|Period||06/6/25 → 06/6/28|
ASJC Scopus subject areas