A sub-1-V low-voltage low-power voltage referencewith a back-gate connection MOSFET

Jun Pan; Yasuaki Inoue

doi:10.1109/ICCCAS.2006.285140

A sub-1-V low-voltage low-power voltage referencewith a back-gate connection MOSFET

Jun Pan^*, Yasuaki Inoue

^*この研究の対応する著者

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

A sub-1-V self-biased low-voltage low-power voltage reference is presented for micropower electronic applications. And the proposed circuit has very low temperature dependence by using a back-gate connection MOSFET. An Hspice simulation shows that the reference voltage and total power dissipation are 181 mV and 1.1 μW, respectively. The temperature coefficient of the reference voltage is 33 ppm/°C within a temperature range from -40 to 100°C. The supply voltage dependence is -0.36 m V/V (Vdd=0.95-3.3 V). Supply voltage can be as low as 0.95 V in a standard CMOS 0.35 °m technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively.

本文言語	English
ホスト出版物のタイトル	2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings
ページ	2314-2318
ページ数	5
巻	4
DOI	https://doi.org/10.1109/ICCCAS.2006.285140
出版ステータス	Published - 2006
イベント	2006 International Conference on Communications, Circuits and Systems, ICCCAS - Guilin 継続期間: 2006 6 25 → 2006 6 28

Other

Other	2006 International Conference on Communications, Circuits and Systems, ICCCAS
City	Guilin
Period	06/6/25 → 06/6/28

ASJC Scopus subject areas

電子工学および電気工学

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10.1109/ICCCAS.2006.285140

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引用スタイル

Pan, J & Inoue, Y 2006, A sub-1-V low-voltage low-power voltage referencewith a back-gate connection MOSFET. in 2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings. vol. 4, 4064387, pp. 2314-2318, 2006 International Conference on Communications, Circuits and Systems, ICCCAS, Guilin, 06/6/25. https://doi.org/10.1109/ICCCAS.2006.285140

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abstract = "A sub-1-V self-biased low-voltage low-power voltage reference is presented for micropower electronic applications. And the proposed circuit has very low temperature dependence by using a back-gate connection MOSFET. An Hspice simulation shows that the reference voltage and total power dissipation are 181 mV and 1.1 μW, respectively. The temperature coefficient of the reference voltage is 33 ppm/°C within a temperature range from -40 to 100°C. The supply voltage dependence is -0.36 m V/V (Vdd=0.95-3.3 V). Supply voltage can be as low as 0.95 V in a standard CMOS 0.35 °m technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively.",

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AB - A sub-1-V self-biased low-voltage low-power voltage reference is presented for micropower electronic applications. And the proposed circuit has very low temperature dependence by using a back-gate connection MOSFET. An Hspice simulation shows that the reference voltage and total power dissipation are 181 mV and 1.1 μW, respectively. The temperature coefficient of the reference voltage is 33 ppm/°C within a temperature range from -40 to 100°C. The supply voltage dependence is -0.36 m V/V (Vdd=0.95-3.3 V). Supply voltage can be as low as 0.95 V in a standard CMOS 0.35 °m technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively.

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A sub-1-V low-voltage low-power voltage referencewith a back-gate connection MOSFET

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