A two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions

Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions (STT-MTJs) is proposed that is smaller than the conventional ones with equivalent performance. The power supply voltage dependence of the area for the two-NFET bootstrap type selective device that can switch MTJs within 10 ns is compared with those of the conventional single-NFET, single-PFET, and CMOS type selective devices with the same performance in 90nm technology node. It is found that the two-NFET bootstrap type selective device can be smaller than the conventional ones especially for the power supply voltage equal to or lower than 0.9V. The two-NFET bootstrap type selective device is shown to maintain scalability to 32nm node just like the CMOS one, while the conventional single-NFET and single-PFET selective devices fail to be scaled properly. This selective device can be applied to every high-performance MOS/MTJ hybrid circuit for increasing the integration density.

本文言語English
論文番号04ED03
ジャーナルJapanese journal of applied physics
53
4 SPEC. ISSUE
DOI
出版ステータスPublished - 2014 4
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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