A vertical InGaN/GaN light-emitting diode fabricated on a flexible substrate by a mechanical transfer method using BN

Toshiki Makimoto*, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Hideki Yamamoto

*この研究の対応する著者

研究成果: Article査読

35 被引用数 (Scopus)

抄録

We have successfully released an InGaN/GaN light-emitting diode (LED) from a sapphire growth substrate and transferred it to a piece of commercially available adhesive tape using a mechanical transfer method called "MeTRe" (Mechanical Transfer using a Release layer). By this method, a 3-nm-thick hexagonal BN (h-BN) layer inserted between the sapphire substrate and the GaN-based layer acts as both a buffer layer for the growth of a high-quality GaN-based layer and a release layer in the transfer process. A very thin (<0.1 mm) vertical LED prototype wrapped with two pieces of adhesive tape emitted violet-blue light.

本文言語English
論文番号072102
ジャーナルApplied Physics Express
5
7
DOI
出版ステータスPublished - 2012 7月 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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