A Vertical Monolithic Combination of an InGaAsP/InP Laser and a Heterojunction Bipolar Transistor

T. R. Chen; Y. Zhuang; Katsuyuki Utaka; Ya Yun Liu; Amnon Yariv

doi:10.1109/JQE.1987.1073402

A Vertical Monolithic Combination of an InGaAsP/InP Laser and a Heterojunction Bipolar Transistor

T. R. Chen^*, Y. Zhuang, Katsuyuki Utaka, Ya Yun Liu, Amnon Yariv

^*この研究の対応する著者

研究成果 › 査読

14 被引用数 (Scopus)

抄録

A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together wIth an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated.

本文言語	English
ページ（範囲）	919-924
ページ数	6
ジャーナル	IEEE Journal of Quantum Electronics
巻	23
号	6
DOI	https://doi.org/10.1109/JQE.1987.1073402
出版ステータス	Published - 1987 6
外部発表	はい

ASJC Scopus subject areas

原子分子物理学および光学
凝縮系物理学
電子工学および電気工学

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10.1109/JQE.1987.1073402

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AU - Liu, Ya Yun

AU - Yariv, Amnon

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A Vertical Monolithic Combination of an InGaAsP/InP Laser and a Heterojunction Bipolar Transistor

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