抄録
A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together wIth an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated.
本文言語 | English |
---|---|
ページ(範囲) | 919-924 |
ページ数 | 6 |
ジャーナル | IEEE Journal of Quantum Electronics |
巻 | 23 |
号 | 6 |
DOI | |
出版ステータス | Published - 1987 6月 |
外部発表 | はい |
ASJC Scopus subject areas
- 原子分子物理学および光学
- 凝縮系物理学
- 電子工学および電気工学