A Vertical Monolithic Combination of an InGaAsP/InP Laser and a Heterojunction Bipolar Transistor

T. R. Chen; Y. Zhuang; Katsuyuki Utaka; Ya Yun Liu; Amnon Yariv

doi:10.1109/JQE.1987.1073402

A Vertical Monolithic Combination of an InGaAsP/InP Laser and a Heterojunction Bipolar Transistor

T. R. Chen^*, Y. Zhuang, Katsuyuki Utaka, Ya Yun Liu, Amnon Yariv

^*この研究の対応する著者

研究成果: Article › 査読

14 被引用数 (Scopus)

抄録

A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together wIth an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated.

本文言語	English
ページ（範囲）	919-924
ページ数	6
ジャーナル	IEEE Journal of Quantum Electronics
巻	23
号	6
DOI	https://doi.org/10.1109/JQE.1987.1073402
出版ステータス	Published - 1987 6月
外部発表	はい

ASJC Scopus subject areas

原子分子物理学および光学
凝縮系物理学
電子工学および電気工学

文献へのアクセス

10.1109/JQE.1987.1073402

他のファイルとリンク

引用スタイル

@article{d02b6c69043b4b82b93fb7f1c591b289,

title = "A Vertical Monolithic Combination of an InGaAsP/InP Laser and a Heterojunction Bipolar Transistor",

abstract = "A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together wIth an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated.",

author = "Chen, {T. R.} and Y. Zhuang and Katsuyuki Utaka and Liu, {Ya Yun} and Amnon Yariv",

year = "1987",

month = jun,

doi = "10.1109/JQE.1987.1073402",

language = "English",

volume = "23",

pages = "919--924",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - A Vertical Monolithic Combination of an InGaAsP/InP Laser and a Heterojunction Bipolar Transistor

AU - Chen, T. R.

AU - Zhuang, Y.

AU - Utaka, Katsuyuki

AU - Liu, Ya Yun

AU - Yariv, Amnon

PY - 1987/6

Y1 - 1987/6

N2 - A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together wIth an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated.

AB - A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together wIth an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0023363878&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023363878&partnerID=8YFLogxK

U2 - 10.1109/JQE.1987.1073402

DO - 10.1109/JQE.1987.1073402

M3 - Article

AN - SCOPUS:0023363878

VL - 23

SP - 919

EP - 924

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 6

ER -

A Vertical Monolithic Combination of an InGaAsP/InP Laser and a Heterojunction Bipolar Transistor

抄録

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル