A Vertical Monolithic Combination of an InGaAsP/InP Laser and a Heterojunction Bipolar Transistor

T. R. Chen; Y. Zhuang; Katsuyuki Utaka; Ya Yun Liu; Amnon Yariv

doi:10.1109/JQE.1987.1073402

A Vertical Monolithic Combination of an InGaAsP/InP Laser and a Heterojunction Bipolar Transistor

T. R. Chen, Y. Zhuang, Katsuyuki Utaka, Ya Yun Liu, Amnon Yariv

基幹理工学部

研究成果: Article

14 引用（Scopus）

抜粋

A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together wIth an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated.

元の言語	English
ページ（範囲）	919-924
ページ数	6
ジャーナル	IEEE Journal of Quantum Electronics
巻	23
発行部数	6
DOI	https://doi.org/10.1109/JQE.1987.1073402
出版物ステータス	Published - 1987 6

フィンガープリント

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

これを引用

Chen, T. R., Zhuang, Y., Utaka, K., Liu, Y. Y., & Yariv, A. (1987). A Vertical Monolithic Combination of an InGaAsP/InP Laser and a Heterojunction Bipolar Transistor. IEEE Journal of Quantum Electronics, 23(6), 919-924. https://doi.org/10.1109/JQE.1987.1073402

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文献にアクセス

10.1109/JQE.1987.1073402