A Vertical Monolithic Combination of an InGaAsP/InP Laser and a Heterojunction Bipolar Transistor

T. R. Chen, Y. Zhuang, Katsuyuki Utaka, Ya Yun Liu, Amnon Yariv

研究成果: Article

14 引用 (Scopus)

抜粋

A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together wIth an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated.

元の言語English
ページ(範囲)919-924
ページ数6
ジャーナルIEEE Journal of Quantum Electronics
23
発行部数6
DOI
出版物ステータスPublished - 1987 6

    フィンガープリント

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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