Abrupt p-type doping profile of carbon atomic layer doped GaAs grown by flow-rate modulation epitaxy

Naoki Kobayashi*, Toshiki Makimoto, Yoshiji Horikoshi

*この研究の対応する著者

研究成果: Article査読

139 被引用数 (Scopus)

抄録

Atomic layer doping of p-type carbon impurity in GaAs was demonstrated using flow-rate modulation epitaxy. An extremely narrow capacitance-voltage profile with 5.8 nm full width at half-maximum is observed in the wafer with a sheet hole density of 9.5×1011 cm- 2. Atomic layer doping of carbon was performed by supplying trimethylgallium or trimethylaluminium instead of triethylgallium. It was found that the sheet hole density does not change before and after annealing for 1 h at 800°C indicating that the carbon is a very stable impurity in GaAs. The diffusion coefficient of carbon is estimated to be 2×10- 16 cm-2/s at 800°C. This is the lowest value ever reported for p-type impurities.

本文言語English
ページ(範囲)1435-1437
ページ数3
ジャーナルApplied Physics Letters
50
20
DOI
出版ステータスPublished - 1987
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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