Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane

T. Yanagi, Yoshimichi Ohki, H. Nishikawa

    研究成果: Conference contribution

    抄録

    Optical absorption changes induced by the irradiation of ultraviolet photons in Ge-doped SiO2 thin films fabricated by plasma-enhanced chemical vapor deposition from tetraethoxysilane are studied. It is confirmed that the sample has a higher photo-sensitivity compared with bulk Ge-doped SiO2 fabricated by conventional vapor-phase axial deposition. This is ascribed to the fact that the Ge E' center, a typical paramagnetic defect center in Ge-doped SiO2 with a large optical absorption, is induced by the photon irradiation. Namely, the high photo-sensitivity originates from large concentrations of two oxygen-deficient precursors of the Ge E' center, the germanium lone pair center and the neutral oxygen vacancy. It is suggested that residual hydrogen from tetraethoxysilane also contributes to the induced optical absorption.

    元の言語English
    ホスト出版物のタイトルProceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials
    ページ1088-1091
    ページ数4
    3
    出版物ステータスPublished - 2003
    イベントProceedings of the 7th International Conference on Properties and Applications of Dielectric Materials - Nagoya
    継続期間: 2003 6 12003 6 5

    Other

    OtherProceedings of the 7th International Conference on Properties and Applications of Dielectric Materials
    Nagoya
    期間03/6/103/6/5

    Fingerprint

    Plasma CVD
    Light absorption
    Photosensitivity
    Photons
    Irradiation
    Thin films
    Polymers
    Germanium
    Oxygen vacancies
    Plasma enhanced chemical vapor deposition
    Hydrogen
    Vapors
    Oxygen
    Defects
    tetraethoxysilane

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

    これを引用

    Yanagi, T., Ohki, Y., & Nishikawa, H. (2003). Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane. : Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials (巻 3, pp. 1088-1091)

    Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane. / Yanagi, T.; Ohki, Yoshimichi; Nishikawa, H.

    Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials. 巻 3 2003. p. 1088-1091.

    研究成果: Conference contribution

    Yanagi, T, Ohki, Y & Nishikawa, H 2003, Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane. : Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials. 巻. 3, pp. 1088-1091, Proceedings of the 7th International Conference on Properties and Applications of Dielectric Materials, Nagoya, 03/6/1.
    Yanagi T, Ohki Y, Nishikawa H. Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane. : Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials. 巻 3. 2003. p. 1088-1091
    Yanagi, T. ; Ohki, Yoshimichi ; Nishikawa, H. / Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane. Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials. 巻 3 2003. pp. 1088-1091
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    AU - Ohki, Yoshimichi

    AU - Nishikawa, H.

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    AB - Optical absorption changes induced by the irradiation of ultraviolet photons in Ge-doped SiO2 thin films fabricated by plasma-enhanced chemical vapor deposition from tetraethoxysilane are studied. It is confirmed that the sample has a higher photo-sensitivity compared with bulk Ge-doped SiO2 fabricated by conventional vapor-phase axial deposition. This is ascribed to the fact that the Ge E' center, a typical paramagnetic defect center in Ge-doped SiO2 with a large optical absorption, is induced by the photon irradiation. Namely, the high photo-sensitivity originates from large concentrations of two oxygen-deficient precursors of the Ge E' center, the germanium lone pair center and the neutral oxygen vacancy. It is suggested that residual hydrogen from tetraethoxysilane also contributes to the induced optical absorption.

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