Acceptor concentration control of p-znse using nitrogen and helium mixed gas plasma

Hiroyuki Tosaka, Tsuyoshi Nagatake, Takashi Yoshida, Masakazu Kobayashi, Akihiko Yoshikawa

研究成果: Article

1 引用 (Scopus)

抜粋

Nitrogen and helium mixed gas plasma was used to grow p-ZnSe. Using the mixed gas, the acceptor concentration can be controlled from 6 x 1016to 7 x 1017cm-3while films doped using the nitrogen plasma exhibited the acceptor concentration of 3 x 1017cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the rf power. p-ZnSe layers grown with this technique were used for blue-green laser structures. Lasing was observed at 77 K under pulse operation.

元の言語English
ページ(範囲)L1722-L1724
ジャーナルJapanese journal of applied physics
32
発行部数12 A
DOI
出版物ステータスPublished - 1993 12
外部発表Yes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント Acceptor concentration control of p-znse using nitrogen and helium mixed gas plasma' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用