Acceptor concentration control of p-ZnSe using N2+He gas plasma by molecular beam epitaxy

Masakazu Kobayashi*, Akihiko Yoshikawa

*この研究の対応する著者

研究成果: Conference article査読

抄録

Nitrogen and helium mixed gas plasma was used to grow p-ZnSe. Using the mixed gas, the acceptor concentration could be controlled from 6×1016 to 7×1017 cm-3 while films doped using the nitrogen plasma exhibited the acceptor concentration of 3×1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the rf power. Plasma spectroscopy was used to characterize the variety of the species in the plasma. Although the variety of the nitrogen related peaks in the spectrum were not significantly affected by the gas mixing, several peaks (for example 745nm and 825nm) showed intensity variation that was similar to the acceptor concentration variation with respect to the N2 and He gas mixing ratio.

本文言語English
ページ(範囲)437-445
ページ数9
ジャーナルMaterials Research Society Symposium - Proceedings
340
出版ステータスPublished - 1994 12 1
外部発表はい
イベントProceedings of the MRS Symposium - San Francisco, CA, USA
継続期間: 1994 4 41994 4 7

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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