ACCESS TIME ANALYSIS OF DYNAMIC MOS RAM.

Yasuji Nagayama, Koichiro Mashiko, Tsutomu Yoshihara, Takao Nakano

研究成果: Article

抜粋

In this paper, to propose a model for access time analysis to achieve a high-speed access time, a signal path which determines the access time of dynamic MOS RAM has been analyzed and the technical issues necessary for high speed are examined. Further, based on the analysis of basic clock delay times and the sensing time, an access time analysis model is proposed. Using this model the sensitivity analysis for high-speed dynamic MOS RAM is performed, and the guidelines are given to realize high-speed dynamic MOS RAM.

元の言語English
ページ(範囲)107-116
ページ数10
ジャーナルElectronics & communications in Japan
66
発行部数5
出版物ステータスPublished - 1983 5
外部発表Yes

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Nagayama, Y., Mashiko, K., Yoshihara, T., & Nakano, T. (1983). ACCESS TIME ANALYSIS OF DYNAMIC MOS RAM. Electronics & communications in Japan, 66(5), 107-116.