Adsorption and thermal or photodecomposition of triethylgallium and trimethylgallium on si(Lll)-7 x7

Ken Ichi Fukui, Wataru Mizutani, Hiroshi Onishi, Shingo Ichimura, Hazime Shimizu, Yasuhiro Iwasawa

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Adsorption and thermal or photodecomposition of triethylgallium (TEG) and trimethylgallium (TMG) on Si(lll)-7x7 were investigated using a home-built scanning tunneling microscope (STM), Auger electron spectroscopy (AES), and thermal desorption spectroscopy (TDS). Adsorption of TEG and TMG at room temperature gave bright protrusions of GatoHs^ia) and Ga(CH3)a;(a) (x = 2, 3) on atop sites of Si adatoms with a slight preference for center adatoms over comer ones. The Ga(C2Hs)x(a) and Ga(CH3)x(a) species were decomposed by UV irradiation probably due to absorption of UV photons by these adsorbates. Thermal decomposition of TEG on the 7x7 surface led to severe carbon deposition, particularly at low initial coverage of TEG, in contrast to the result reported on Si(l00)-2 x 1.

本文言語English
ページ(範囲)4910-4916
ページ数7
ジャーナルJapanese journal of applied physics
34
9R
DOI
出版ステータスPublished - 1995 9
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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