Advanced GaN HEMT modeling techniques and power amplifiers for millimeter-wave applications

Shintaro Shinjo*, Masatake Hangai, Yutaro Yamaguchi, Moriyasu Miyazaki

*この研究の対応する著者

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

Satellite communications become more interesting because of an increasing number of satellite launches for especially Ku-band very small aperture terminals (VSAT). Recently, the systems push the frequency specifications towards millimeter-wave such as Ka-band. Also, the fifth generation mobile communications (5G) are expected to accommodate the forthcoming huge traffic demands with using millimeter-wave as well as sub-6GHz. Here, PAs have been always the working horse for RF frontend in any radio transmitters. In particular, advanced GaN PAs occupy the attentions with evolving to deal with ever-increasing system level requirements. This paper presents the prototyped results of state-of -the art GaN PAs for millimeter-wave applications and novel modelling techniques for their designs.

本文言語English
ホスト出版物のタイトルIMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium
出版社Institute of Electrical and Electronics Engineers Inc.
ページ566-569
ページ数4
ISBN(電子版)9781728168159
DOI
出版ステータスPublished - 2020 8月
外部発表はい
イベント2020 IEEE/MTT-S International Microwave Symposium, IMS 2020 - Virtual, Los Angeles, United States
継続期間: 2020 8月 42020 8月 6

出版物シリーズ

名前IEEE MTT-S International Microwave Symposium Digest
2020-August
ISSN(印刷版)0149-645X

Conference

Conference2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
国/地域United States
CityVirtual, Los Angeles
Period20/8/420/8/6

ASJC Scopus subject areas

  • 放射線
  • 凝縮系物理学
  • 電子工学および電気工学

フィンガープリント

「Advanced GaN HEMT modeling techniques and power amplifiers for millimeter-wave applications」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル