Advanced shallow trench isolation to suppress the inverse narrow channel effects for 0.24 μm pitch isolation and beyond

K. Horita*, T. Kuroi, Y. Itoh, K. Shiozawa, K. Eikyu, K. Goto, Y. Inoue, M. Inuishi

*この研究の対応する著者

研究成果: Conference article査読

16 被引用数 (Scopus)

抄録

A novel shallow trench isolation (STI) technique named Poly-Si-Buffered-mask STI (PB-STI) using the SiN/poly-Si/SiO2 stacked mask has been proposed. Poly-Si is oxidized at the step of liner oxidation and then `small bird's beak' is grown. With small bird's beak formation the oxide recess at the trench edge is prevented and the fringing of electric-field from the gate electrode can be effectively avoided. PB-STI can completely suppress the inverse narrow channel effect with quite simple process sequence which includes no corner implantation.

本文言語English
ページ(範囲)178-179
ページ数2
ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
出版ステータスPublished - 2000 1月 1
外部発表はい
イベント2000 Symposium on VLSI Technology - Honolulu, HI, USA
継続期間: 2000 6月 132000 6月 15

ASJC Scopus subject areas

  • 電子工学および電気工学

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