Advanced shallow trench isolation to suppress the inverse narrow channel effects for 0.24 μm pitch isolation and beyond

K. Horita; T. Kuroi; Y. Itoh; K. Shiozawa; K. Eikyu; K. Goto; Y. Inoue; M. Inuishi

Advanced shallow trench isolation to suppress the inverse narrow channel effects for 0.24 μm pitch isolation and beyond

K. Horita^*, T. Kuroi, Y. Itoh, K. Shiozawa, K. Eikyu, K. Goto, Y. Inoue, M. Inuishi

^*この研究の対応する著者

研究成果: Conference article › 査読

17 被引用数 (Scopus)

抄録

A novel shallow trench isolation (STI) technique named Poly-Si-Buffered-mask STI (PB-STI) using the SiN/poly-Si/SiO₂ stacked mask has been proposed. Poly-Si is oxidized at the step of liner oxidation and then `small bird's beak' is grown. With small bird's beak formation the oxide recess at the trench edge is prevented and the fringing of electric-field from the gate electrode can be effectively avoided. PB-STI can completely suppress the inverse narrow channel effect with quite simple process sequence which includes no corner implantation.

本文言語	English
ページ（範囲）	178-179
ページ数	2
ジャーナル	Digest of Technical Papers - Symposium on VLSI Technology
出版ステータス	Published - 2000 1月 1
外部発表	はい
イベント	2000 Symposium on VLSI Technology - Honolulu, HI, USA 継続期間: 2000 6月 13 → 2000 6月 15

ASJC Scopus subject areas

電子工学および電気工学

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title = "Advanced shallow trench isolation to suppress the inverse narrow channel effects for 0.24 μm pitch isolation and beyond",

abstract = "A novel shallow trench isolation (STI) technique named Poly-Si-Buffered-mask STI (PB-STI) using the SiN/poly-Si/SiO2 stacked mask has been proposed. Poly-Si is oxidized at the step of liner oxidation and then `small bird's beak' is grown. With small bird's beak formation the oxide recess at the trench edge is prevented and the fringing of electric-field from the gate electrode can be effectively avoided. PB-STI can completely suppress the inverse narrow channel effect with quite simple process sequence which includes no corner implantation.",

author = "K. Horita and T. Kuroi and Y. Itoh and K. Shiozawa and K. Eikyu and K. Goto and Y. Inoue and M. Inuishi",

year = "2000",

month = jan,

day = "1",

language = "English",

pages = "178--179",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2000 Symposium on VLSI Technology ; Conference date: 13-06-2000 Through 15-06-2000",

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TY - JOUR

T1 - Advanced shallow trench isolation to suppress the inverse narrow channel effects for 0.24 μm pitch isolation and beyond

AU - Horita, K.

AU - Kuroi, T.

AU - Itoh, Y.

AU - Shiozawa, K.

AU - Eikyu, K.

AU - Goto, K.

AU - Inoue, Y.

AU - Inuishi, M.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - A novel shallow trench isolation (STI) technique named Poly-Si-Buffered-mask STI (PB-STI) using the SiN/poly-Si/SiO2 stacked mask has been proposed. Poly-Si is oxidized at the step of liner oxidation and then `small bird's beak' is grown. With small bird's beak formation the oxide recess at the trench edge is prevented and the fringing of electric-field from the gate electrode can be effectively avoided. PB-STI can completely suppress the inverse narrow channel effect with quite simple process sequence which includes no corner implantation.

AB - A novel shallow trench isolation (STI) technique named Poly-Si-Buffered-mask STI (PB-STI) using the SiN/poly-Si/SiO2 stacked mask has been proposed. Poly-Si is oxidized at the step of liner oxidation and then `small bird's beak' is grown. With small bird's beak formation the oxide recess at the trench edge is prevented and the fringing of electric-field from the gate electrode can be effectively avoided. PB-STI can completely suppress the inverse narrow channel effect with quite simple process sequence which includes no corner implantation.

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M3 - Conference article

AN - SCOPUS:0033698748

SN - 0743-1562

SP - 178

EP - 179

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - 2000 Symposium on VLSI Technology

Y2 - 13 June 2000 through 15 June 2000

ER -

Advanced shallow trench isolation to suppress the inverse narrow channel effects for 0.24 μm pitch isolation and beyond

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