A novel shallow trench isolation (STI) technique named Poly-Si-Buffered-mask STI (PB-STI) using the SiN/poly-Si/SiO2 stacked mask has been proposed. Poly-Si is oxidized at the step of liner oxidation and then `small bird's beak' is grown. With small bird's beak formation the oxide recess at the trench edge is prevented and the fringing of electric-field from the gate electrode can be effectively avoided. PB-STI can completely suppress the inverse narrow channel effect with quite simple process sequence which includes no corner implantation.
|ジャーナル||Digest of Technical Papers - Symposium on VLSI Technology|
|出版ステータス||Published - 2000 1月 1|
|イベント||2000 Symposium on VLSI Technology - Honolulu, HI, USA|
継続期間: 2000 6月 13 → 2000 6月 15
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