Advanced shallow trench isolation to suppress the inverse narrow channel effects for 0.24 μm pitch isolation and beyond

K. Horita, T. Kuroi, Y. Itoh, K. Shiozawa, K. Eikyu, K. Goto, Y. Inoue, M. Inuishi

研究成果: Conference article査読

16 被引用数 (Scopus)

抄録

A novel shallow trench isolation (STI) technique named Poly-Si-Buffered-mask STI (PB-STI) using the SiN/poly-Si/SiO2 stacked mask has been proposed. Poly-Si is oxidized at the step of liner oxidation and then `small bird's beak' is grown. With small bird's beak formation the oxide recess at the trench edge is prevented and the fringing of electric-field from the gate electrode can be effectively avoided. PB-STI can completely suppress the inverse narrow channel effect with quite simple process sequence which includes no corner implantation.

本文言語English
ページ(範囲)178-179
ページ数2
ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
出版ステータスPublished - 2000 1 1
外部発表はい
イベント2000 Symposium on VLSI Technology - Honolulu, HI, USA
継続期間: 2000 6 132000 6 15

ASJC Scopus subject areas

  • 電子工学および電気工学

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