Advantage of highly concentrated (≥90%) ozone for chemical vapor deposition SiO2 grown under 200 °c using hexamethyldisilazane and ultraviolet light excited ozone

Naoto Kameda*, Tetsuya Nishiguchi, Yoshiki Morikawa, Mitsuru Kekura, Hidehiko Nonaka, Shingo Ichimura

*この研究の対応する著者

研究成果: Article査読

6 被引用数 (Scopus)

抄録

We have compared the UV-light-excited ozone chemical vapor deposition (CVD) process conditions and the film quality for the cases where either highly concentrated (≥90%: HC) or 7% ozone and either hexamethyldisilazane (HMDS) or tetraethoxysilane (TEOS) are used. The SiO2 film deposited using HMDS and UV-excited HC ozone with an optimized flow rate has the highest quality in terms of leakage current density, etching rate, and deposition rate which are comparable or superior to those of the conventional thermal TEOS SiO 2 grown at 620 °C. These results lead to a conclusion that it is preferable to use HC ozone for UV-light-excited-ozone CVD to deposit the high quality SiO2 films at a practical rate at a temperature as low as 200°C.

本文言語English
ページ(範囲)05DB011-05DB014
ジャーナルJapanese journal of applied physics
48
5 PART 2
DOI
出版ステータスPublished - 2009 5 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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