AFM studies on the difference in wear behavior between Si and SiO2 in KOH solution

Futoshi Katsuki, Kazuhito Kamei, Akihiko Saguchi, Wataru Takahashi, Junji Watanabe

研究成果: Article査読

54 被引用数 (Scopus)

抄録

Wear behavior between a Si tip and a SiO2 film in KOH solution at various pH values has been examined by using an atomic force microscope. We found that the Si tip removal amount strongly depended on the solution pH value and was at a maximum at pH 10.2-12.5. This result indicates that wear behavior of the Si tip is similar to that of actual chemical mechanical polishing of a Si wafer. It was also found that the Si removal volume in moles was approximately equal to that of SiO2 irrespective of the solution pH value. This equality implies that a Si-O-Si bridge is formed between one Si atom and one SiO2 molecule at the wear interface, followed by the oxidation of the Si tip, and finally the bond rupture by the tip movement and the silica species including the Si-O-Si bridge is dissolved in the KOH solution.

本文言語English
ページ(範囲)2328-2331
ページ数4
ジャーナルJournal of the Electrochemical Society
147
6
DOI
出版ステータスPublished - 2000 6月
外部発表はい

ASJC Scopus subject areas

  • 電気化学
  • 表面、皮膜および薄膜
  • 表面および界面

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