Air-gap structure between integrated LiNbO3 optical modulators and micromachined Si substrates

Ryo Takigawa*, Eiji Higurashi, Tadatomo Suga, Tetsuya Kawanishi

*この研究の対応する著者

研究成果: Article査読

28 被引用数 (Scopus)

抄録

The air-gap structure between integrated LiNbO3 optical modulators and micromachined Si substrates is reported for high-speed optoelectronic systems. The calculated and experimental results show that the high permittivity of the Si substrate decreases the resonant modulation frequency to 10 GHz LiNbO 3 resonant-type optical modulator chips on the Si substrate. To prevent this substrate effect, an air-gap was formed between the LiNbO 3 modulator and the Si substrate. The ability to fabricate the airgap structure was demonstrated using low-temperature flip-chip bonding (100 °C) and a Si micromachining process, and its performance was experimentally verified.

本文言語English
ページ(範囲)15739-15749
ページ数11
ジャーナルOptics Express
19
17
DOI
出版ステータスPublished - 2011 8 15
外部発表はい

ASJC Scopus subject areas

  • 原子分子物理学および光学

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