Al and N co-doped ZnTe Layers Grown by MBE

A. Ichiba, M. Kobayashi*

*この研究の対応する著者

研究成果: Article査読

5 被引用数 (Scopus)

抄録

The co-doping technique known as an effective method to circumvent the dopant compensation problem was applied for the molecular beam epitaxy (MBE) growth of homoepitaxial ZnTe layers. The co-doping concept is to introduce two oppositely polar atoms at the same time in a 2:1 ratio, forming metastable three-atom complexes located at adjacent crystal sites. Al donor and N acceptor were sandwiched between undoped ZnTe spacing layers. In order to reduce the beam intensity of the RF plasma excited nitrogen species, N2 gas was diluted by Ar gas. From the low temperature PL spectra, the increase of the Al doping efficiency was confirmed for co-doped layers, especially co-doped using the diluted N2 gas.

本文言語English
ページ(範囲)285-288
ページ数4
ジャーナルJournal of Crystal Growth
301-302
SPEC. ISS.
DOI
出版ステータスPublished - 2007 4

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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