Al-doped ZnO films deposited on a slightly reduced buffer layer by reactive dc unbalanced magnetron sputtering

Minehide Kusayanagi, Azusa Uchida, Nobuto Oka, Junjun Jia, Shin Ichi Nakamura, Yuzo Shigesato*

*この研究の対応する著者

研究成果: Article査読

20 被引用数 (Scopus)

抄録

Al-doped ZnO (AZO) films were deposited on a fused silica glass substrate by reactive dc unbalanced magnetron sputtering using a Zn-Al (Al: 3.6 at.%) alloy target with an impedance control system. A very thin slightly reduced AZO buffer layer was inserted between the glass substrate and AZO films. For the AZO films deposited at 200 C, the lowest resistivity in the absence of the buffer layer was 8.0 × 10- 4 Ω cm, whereas this was reduced to 5.9 × 10- 4 Ω cm after introducing a 5-nm-thick buffer layer. The transmittance for all the films was above 80% in the visible region. The effects of the buffer layer were analysed and discussed in detail. It is found that the insertion of the buffer layer can improve the crystallinity of the AZO film.

本文言語English
ページ(範囲)93-99
ページ数7
ジャーナルThin Solid Films
555
DOI
出版ステータスPublished - 2014 3月 31
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

フィンガープリント

「Al-doped ZnO films deposited on a slightly reduced buffer layer by reactive dc unbalanced magnetron sputtering」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル