抄録
AlGaAs/GaAs heterojunction bipolar transistors are fabricated using carbon-doped p-type GaAs base regions grown for the first time by flow-rate modulation epitaxy. Because of the much smaller diffusion coefficient of carbon atoms in GaAs than that of beryllium and other p-type impurities, sharp impurity profiles are achieved. The heterojunction bipolar transistors exhibited high current gains up to 40 for a base layer width of 150 nm and base doping of 2.4×1019 cm-3. The electron lifetime in heavily carbon-doped GaAs layers is considerably long, indicating favorable quality of heavily carbon-doped layers.
本文言語 | English |
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ページ(範囲) | 39-41 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 54 |
号 | 1 |
DOI | |
出版ステータス | Published - 1989 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)